After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...

Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...

Researchers at Berkeley Lab, using a trio of single-atom-thick wonder materials -- graphene, boron nitride, and molybdenite -- have created the first all-2D field-effect transistor. This FET could ...

A new technical paper titled “Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO 3 nanomembranes at sub-ambient temperatures” was published by researchers at Penn ...

The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...

Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator. “The variety of electronic ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...