Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
HONOLULU — Micron Technology Inc. unveiled a DRAM architecture that combines a new capacitor with the 6F cell design the company first introduced in 2003. Speaking at the 2004 Symposium on VLSI ...
From the deluge of fine papers at the International Electron Devices Meeting last week it is possible to see the outlines of a broad movement within the design community: development to provide the ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
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