Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
Engineers from Soctera and Trinix Technology are claiming to have delivered a substantial increase in the continuous-wave (CW ...
Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
Semiconductor research lab imec is to develop processes for growing GaN power semiconductors on 300mm wafers – capacity is now mostly on 200mm. It will be working with Aixtron, GlobalFoundries, KLA, ...
Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...
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