Texas Instruments (TI) has claimed the first automotive gallium nitride (GaN) field-effect transistors (FETs) with integrated driver, protection, and active power management for automotive and ...

While visiting Efficient Power Conversion’s booth at APEC 2017, I became keenly aware of what CEO and co-Founder, Alex Lidow has been leading up to when he hired an immensely talented technical team ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today introduced its ...

Gallium nitride (GaN) based transistors have been around for many years for rf applications. More recently, the focus has been on development of cost effective, high performance GaN based devices for ...

Chip makers continue to get ready for Gallium-Nitride semiconductors and the higher efficiencies they can bring. Among the latest devices targeting GaN is a low-side gate driver for use with MOSFETs ...

Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...

Nexperia’s GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that ...

Elevation Semiconductor unveiled two high-efficiency power IC chips with smaller footprints for 20W to 65W charger fast charging through USB Power Delivery (PD) for smartphones and tablet computers, ...