Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power. Together, EPC and ...

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

An advanced gate design could reshape EV and data center power systems.

onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...

GaN power devices are expanding into various industries, including AI data centres, robotics, electric vehicles, renewable ...

Infineon Technologies is phasing out the automotive GaN power devices it acquired with GaN Systems as it looks to introduce its own devices.

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...

TOKYO--(BUSINESS WIRE)-- The QST TM substrate *1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures ...