KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in ...

- Contributing to realization and wide spread of implementation in vertical GaN power devices - GaN devices are attracting attention as next-generation devices that combine high device characteristics ...

TOKYO--(BUSINESS WIRE)-- Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate*1 is an essential material for ...

TOKYO--(BUSINESS WIRE)-- The QST TM substrate *1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) ...

The significant expansion of Chinese manufacturers' SiC substrate production capacity in 2024 has led to oversupply and a sharp decline in prices, rapidly expanding the applicable market and squeezing ...

With the same electrical characteristics, such as breakdown voltage, on-resistance and maximum current, vertical conduction power devices based on gallium nitride require a smaller die surface than ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...

TOKYO--(BUSINESS WIRE)--OKI (TOKYO: 6703), in collaboration with Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; "Shin-Etsu Chemical"), has announced the successful ...