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Halogen-free plasma technique achieves atomic-level etching of hafnium oxide for next-gen semiconductors
Hafnium oxide (HfO 2) has attracted attention as a promising material for ultrathin semiconductors and other microelectronic devices. The strong ionic bond between hafnium and oxygen atoms in HfO 2 ...
The process comprises a surface nitrogenation step via N + ion bombardment, followed by O 2 plasma treatment to form volatile etching byproducts. This approach enables subatomic-level etching ...
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