CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Dublin, Aug. 13, 2021 (GLOBE NEWSWIRE) -- The "Insulated-Gate Bipolar Transistor (IGBT) Market - Growth, Trends, COVID-19 Impact, and Forecasts (2021 - 2026)" report has been added to ...

The IGBT market is poised to grow by $ 3.77 billion during 2020-2024 progressing at a CAGR of 9% during the forecast period. The report on IGBT market provides a holistic analysis, market size and ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon ...

Without electric motors, industrial drive technology with its automated production processes would hardly be conceivable. IGBT semiconductor devices control high-performance electrical drives whose ...

Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...

LONDON — Infineon Technologies AG has introduced a family of power switching devices for use in the electric motor drives of home appliances. The new 600-V IGBTs are suitable for variable speed motor ...

Renesas is aiming its next generation of IGBTs at electric vehicle inverters, and is making them on 300mm wafers. Renesas is aiming its next generation of IGBTs at electric vehicle inverters, and is ...

International Rectifier announces a new family of automotive-qualified 600-V IGBTs optimized for variable speed motor control and power supply applications used in electric and hybrid vehicles. Oct. 5 ...

HYDERABAD, India, June 27, 2019 /PRNewswire/ -- The global production of electric vehicles (EVs) is projected to surpass 403,000 by the end of 2019. Increasing production of EVs from 0.5 million to 14 ...

Renesas Electronics has developed a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next ...