Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

With the global trend toward green power and affordable energy gaining momentum, applications such as home appliances, lighting, and power tools, as well as other industrial equipment and ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Inverter gate driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents, coupled with high voltage safety standards ...

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the launch of its new series of Insulated Gate Bipolar Transistors (IGBTs) designed for ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon ...

SEOUL, South Korea, November 03, 2025--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX) ("Magnachip" or the "Company") today announced it has concluded an agreement with Hyundai Mobis ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...

SEOUL - Magnachip Semiconductor Corporation (NYSE:MX) announced on Tuesday the release of a new series of Insulated Gate Bipolar Transistors (IGBTs) designed for solar inverters and industrial Energy ...