LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4 bulk GaN ...

A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...

Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa manufactures. A major advancement in a commercially viable new ...

Following the first reported 100 mm diameter AlN in 2023, the company now announces improved wafer quality based on specification for UVC LEDs Comparison of Crystal IS 100 mm bulk aluminum nitride ...