Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Integrated circuit company Montage Technology has launched its CXL 3.1 Memory eXpander Controller (MXC), which is currently being tested by some of its key customers, including AMD and Intel. The ...

Compute Express Link (CXL), the technology for connecting memory, was among the themes at last week’s Future of Memory and Storage summit in Santa Clara. CXL is an open standard for high-speed, ...

Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...

The rapid evolution of semiconductor devices has amplified the demand for advanced automated test equipment (ATE) that can handle increasingly complex test scenarios for logic devices. ATE vector ...

What is PCMO ReRAM? Difference between filamentary and PCMO ReRAM. Why tunable persistence is important. The idea of non-volatile, resistive RAM (ReRAM) has been around for a while. Its aim is to ...