SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
The drive to reduce fuel consumption and CO 2 emissions by automobile manufacturers worldwide is clearly aided by the electrification of accessories and powertrains alike. Such developments become ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
Infineon is putting 1,200V and 2,000V SiC mosfet half bridges into 62mm module packaging. “The package enables the use of SiC for mid-power applications from 250kW, where silicon reaches the limits of ...
Promising higher efficiencies, the QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules can operate at temperatures well beyond those possible with silicon IGBT-based modules with 38% lower ...
International Rectifier has introduced the IRF4000, a 100-V-rated device integrating four HEXFET MOSFETs into a single Power MLP package for Power-over-Ethernet (PoE) applications. The new device ...
Ideal Power is aiming to compete with smart IGBT modules, with a 1.2kV 160A (100°C, 240A at 25°C) power module built around its novel ‘B-Tran’ bi-direction semiconductor switch. Called IPA01216DFx-HS, ...
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