“2D materials have the potential to extend and augment the CMOS scaling roadmap. However, upscaling from lab-based demonstrators to 300 mm-compatible integration modules presents unique challenges. In ...
The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
Vishay Intertechnology, Inc. released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages. Vishay Intertechnology, Inc. released ...
Infineon has released a family of custom mosfets targeted specifically for hot-swap, e-fuse and battery protection. Called ‘Linear FET’, Infineon’s new mosfets combine the safe-operating area (SOA) ...
With the help of double-patterning and other advanced lithography techniques, CMOS technology continues to scale to 20-nanometer (nm) and beyond. Yet, because of their superior attributes, FinFETs are ...
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