The new gate driver family supports up to 600V operation, expanding the company’s high-voltage power solutionsCHANDLER, Ariz.
Promises faster switching, higher noise immunity, and tighter integration with low-voltage controllers, addressing the ...
To meet the needs of high-voltage power management applications, Microchip Technology announces its 600V gate driver ...
When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...
This application note covers the topic of calculating gate driver power and thermal dissipation of the gate drive optocoupler IC. Gate drive optocouplers are used to drive, turning-on and off, power ...
Silicon Carbide (SiC) power semiconductors are rapidly emerging in the commercial market. These devices offer several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can ...
STMicroelectronics has introduced a new family of ultra‑compact synchronous‑rectifier controllers designed to improve ...
BIEL, Switzerland--(BUSINESS WIRE)--IGBT gate driver manufacturer CT-Concept Technologie GmbH, a Power Integrations company, has announced the availability of its 1SC0450V single driver core for IGBT ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has released “TCK421G” for 20V power lines as the first product in its new “TCK42xG Series” of MOSFET ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
This application note covers the topic of calculating gate driver power and thermal dissipation of the gate drive optocoupler IC. Gate drive optocouplers are used to drive, turning-on and off , power ...
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