Neubiberg, Germany — Infineon Technologies AG has announced a new family of RF power transistors in an open-cavity plastic package with a copper base, targeted at the high-volume cellular ...

Freescale was the first company to fully exploit the advantages of over-molded plastic packaging for high-power RF devices, resulting in greater reliability, lower overall costs, faster manufacturing ...

EINDHOVEN, The Netherlands, June 05, 2018 (GLOBE NEWSWIRE) -- Ease of use and design re-use across frequencies have not traditionally been associated with RF power solutions — until now. Today, NXP ...

PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...

Microsemi Corporation (Irvine, California) has introduced a new family of RF MOSFETs in a thermally-enhanced SOE package for broadband commercial and hi-rel applications requiring high power and gain ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...

The company signs a deal to supply NEC with RF transistors for its 3G wireless network, its second such contract in the past two weeks and a sign of its challenge to Motorola. Marguerite Reardon ...