Thermal integration : Designed for easier system-level thermal integration via top-side cooling.

Wolfspeed has announced the industry's first commercially available 10 kV SiC power MOSFET, describing it as setting a new ...

SEOUL, South Korea, March 11, 2026 /PRNewswire/ -- SK keyfoundry, an 8-inch pure-play foundry in Korea, announced that it has recently completed the development of its SiC (Silicon Carbide) Planar ...

These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...

SK keyfoundry, an 8-inch pure-play foundry in Korea, has recently completed the development of its SiC planar MOSFET process platform. The company also revealed that it has secure ...

Geely's ZEEKR using ROHM’s SiC MOSFETs in the traction inverters of the ZEEKR X, 009, and 001 · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Aug. 29, 2024 (GLOBE NEWSWIRE) -- ROHM ...

Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...

What the wheel is to a driver, is what the Sic MOSFET is to engineers and designers. When a driver has the mastery of a vehicle’s wheel, moving and navigating the terrains become easy. This applies to ...

With a drain-source breakdown voltage of 1700 V, the SCT2H12NZ N-channel SiC (silicon carbide) MOSFET from ROHM is optimized for industrial applications, including high-voltage general-purpose ...

Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...