NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...

Gallium nitride (GaN), a binary III-V bandgap material, has been used to make LEDs for the last several years. GaN has also been touted as the next big thing in power electronics and RF. To some ...

- Contributing to realization and wide spread of implementation in vertical GaN power devices - GaN devices are attracting attention as next-generation devices that combine high device characteristics ...

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Scottsdale, Ariz, Oct. 30, 2025 (GLOBE NEWSWIRE) -- Summary -- As global energy demand surges from AI data centers, electric vehicles, and other energy intensive applications, onsemi has introduced ...

Onsemi has announced vertical GaN power devices, which it said are with early access customers in 700V and 1,200V form. “Developed and manufactured at Onsemi’s fab in Syracuse, New York, Onsemi holds ...

onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GFS) (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...

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